Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature

Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

  Ma, Shaojun ^a   Sodabanlu, Hassanet ^b   Watanabe, Kentaroh ^b   Sugiyama, Masakazu ^a   Nakano, Yoshiaki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CALCULATION METHODS; CURVATURE CALCULATION; CURVATURE MEASUREMENT; FITTING RESULTS; GROWTH CONDITIONS; HIGH PERFORMANCE DEVICES; HIGH-ACCURACY; IN-SITU; LATTICE RELAXATION; LATTICE-MISMATCHED; MEASURED CURVATURE; MEASUREMENT AND SIMULATION; METAL-ORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL SOLAR CELLS; STONEY'S EQUATION; STRAIN COMPENSATION; STRUCTURAL PARAMETER; THERMAL EXPANSION COEFFICIENTS;

CURVE FITTING; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM; VAPORS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84859350056     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3663309     Document Type: Article

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