Low temperature direct bonding of InP and Si 3N 4-coated silicon wafers for photonic device integration

Journal of the Electrochemical Society

Volumn 159, Issue 5, 2012, Pages

  Wang, Yadong ^a,c   Ng, Doris Keh Ting ^a   Wang, Qian ^a   Pu, Jing ^a   Liu, Chongyang ^a,d   Ho, Seng Tiong ^a,b  

^a AGENCY FOR SCIENCE   (Singapore)

^b Northwestern University   (United States)

^c SCHOOL OF ENGINEERING   (Singapore)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; BONDED INTERFACE; BONDED STRUCTURE; BONDING ENERGIES; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEVICE INTEGRATION; DIRECT BONDING; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; HIGH THERMAL CONDUCTIVITY; HIGH-CRYSTALLINE QUALITY; HIGH-POWER; HYDROPHILIC INTERFACES; INP; LOW TEMPERATURE DIRECT BONDING; LOW TEMPERATURES; OXYGEN PLASMA ACTIVATION; OXYGEN PLASMAS; PHOTONIC INTEGRATIONS; POTENTIAL APPLICATIONS; PULLING TEST; SI PHOTONICS; SI SUBSTRATES; THIN LAYERS;

OXYGEN; SILICON; TEMPERATURE; THERMAL CONDUCTIVITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING; X RAY DIFFRACTION;

SILICON WAFERS;

EID: 84859340656     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.051205jes     Document Type: Article

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