Low-temperature growth of highly conductive and transparent aluminum-doped ZnO film by ultrasonic-mist deposition

Korean Journal of Chemical Engineering

Volumn 29, Issue 4, 2012, Pages 525-528

  Seo, Seung Woo ^a   Won, Sung Ho ^b   Chae, Heeyeop ^a   Cho, Sung Min ^a  

^a Sungkyunkwan University   (South Korea)

^b Dongyang Mirae University   (South Korea)

Author keywords

Aluminum doped Zinc Oxide (AZO); Transparent Conducting Oxides; Ultrasonic mist Deposition; Zinc Oxide

Indexed keywords

EID: 84859269345     PISSN: 02561115     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11814-011-0207-1     Document Type: Article

References (24)

1. P. J. Kelly and Y. Zhou, J. Vac. Sci. Technol. A, 24(5), 1782 (2006).
2. S.-M. Park, T. Ikegami and K. Ebihara, Jpn. J. Appl. Phys., 44(11), 8027 (2005).
3. H. Sato, T. Minami, T. Miyata, S. Takata and M. Ishii, Thin Solid Films, 246, 65 (1994).
4. S. Mrida and D. Basak, J. Phys. D: Appl. Phys., 40, 6902 (2007).
5. W. M. Tsang, F. L. Wong, M. K. Fung, J. C. Chang, C. S. Lee and S. T. Lee, Thin Solid Films, 517, 891 (2008).
6. P. K. Nayak, J. Yang, J. Kim, S. Chung, J. Jeong, C. Lee and Y. Hong, J. Phys. D: Appl. Phys., 42, 035102 (2009).
7. E. B. Yousfi, B. Weinberger, F. Donsanti, P. Cowache and D. Lincot, Thin Solid Films, 387, 29 (2001).
8. A. Ashour, M. A. Kaid, N. Z. El-Sayed and A. A. Ibrahim, Appl. Surf. Sci., 252, 7844 (2006).
9. S. M. Rozati and S. Akesteh, Mater. Charact., 58, 319 (2007).
10. J. Wienke and A. S. Booij, Thin Solid Films, 516, 4508 (2008).
11. M. de la L. Olvera, H. Gomez and A. Maldonado, Sol. Energy Mater. Sol. Cells, 91, 1449 (2007).
12. M. A. Kaid and A. Ashour, Appl. Surf. Sci., 253, 3029 (2007).
13. M. A. Lucio-Lopez, M. A. Luna-Arias, A. Maldonado, M. de la L. Olvera and D. R. Acosta, Sol. Energy Mater. Sol. Cells, 90, 733 (2006).
14. M. Caglar, S. Ilican, Y. Caglar and F. Yakuphanoglu, J. Mater. Sci.: Mater. Electron., 19, 704 (2008).
15. J.-H. Lee and B.-O. Park, Mater. Sci. Eng. B, 106, 242 (2004).
16. T. Y. Ma and S. C. Lee, J. Mater. Sci.: Mater. Electron., 11, 305 (2000).
17. J. G. Lu, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima and S. Fujita, J. Cry. Growth, 299, 1 (2007).
18. H. Nishinaka, T. Kawaharamura and S. Fujita, Jpn. J. Appl. Phys., 46(10A), 6811 (2007).
19. T. Maruyama and J. Shionaoya, J. Mater. Sci. Lett., 11, 170 (1992).
20. H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafai and D. B. Chrisey, J. Appl. Phys., 86, 6451 (1999).
21. M. K. Jayaraj, A. Antony and M. Ramachandram, Bull. Mater. Sci., 25(3), 227 (2002).
22. A. P. Roth, J. B. Webb and D. F. Williams, Phys. Rev., B25, 7836 (1982).
23. B. E. Sernelius, K. F. Berggren, Z. C. Jin, I. Hamberg and C. Granqvist, Phys. Rev., B37, 10244 (1988).
24. K. Sato, Y. Gotoh, Y. Wakayama, Y. Hayashi, K. Adachi and H. Nishimura, Reports of the Research Labs; Asahi Glass Co. Ltd., 42, 129 (1992).