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Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

Valence band structure in boron-zinc oxide films characterized by secondary electron emission

(5) Uhm, Han S a Choi, Joon H a Yoo, Ha J a Kwon, Gi C a Choi, Eun H a

a Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER NEUTRALIZATION; BORON-DOPING; CELL PERFORMANCE; CHARACTERISTIC ENERGY; ELECTRONS AND HOLES; HELIUM ION; HIGH CONCENTRATION; MEASUREMENT METHODS; PEAK DENSITY; SECONDARY ELECTRON EMISSIONS; STANDARD TEMPERATURE AND PRESSURES; SYNTHETIC FILMS; ZINC OXIDE (ZNO);

BORON; CRYSTAL IMPURITIES; OXIDE FILMS; SECONDARY EMISSION; VALENCE BANDS; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84858986199 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3689848 Document Type: Article

Times cited : (3)

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