Measurement of valence band structure in boron-zinc-oxide films by making use of ion beams

Applied Physics Letters

Volumn 99, Issue 26, 2011, Pages

  Uhm, Han S ^a   Kwon, Gi C ^a   Choi, Eun H ^a  

^a Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER NEUTRALIZATION; ELECTRONS AND HOLES; ENERGY DISTRIBUTIONS; HIGH CONCENTRATION; OXIDE CRYSTALS; SECONDARY ELECTRON EMISSIONS;

AUGERS; BORON; BORON COMPOUNDS; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; SECONDARY EMISSION; VALENCE BANDS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 84855647399     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3672052     Document Type: Article

References (22)

1. J. W. Allen, Nature 187, 403 (1960). 10.1038/187403b0
2. A. B. Sproul and M. A. Green, J. Appl. Phys. 70, 846 (1991). 10.1063/1.349645
3. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties (Springer, New York, 2004), Chap..
4. J. M. Pearce, N. Podraza, R. W. Collins, M. M. Al-Jassim, K. M. Jones, J. Deng, and C. R. Wronski, J. Appl. Phys. 101, 114301 (2007). 10.1063/1.2714507 (Pubitemid 46934937)
5. N. Gupta, G. F. Alapatt, R. Podila, R. Singh, and K.F. Poole, Int. J. Photoenergy 2009, 13 (2009).
6. L. F. Weber, IEEE Trans. Plasma Sci. 34, 268 (2006). 10.1109/TPS.2006. 872440
7. R. L. Myers, Display Interfaces: Fundamentals and Standards (Wiley, New York, 2002), p. 69.
8. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, T. C. Collins, W. Harsch, and G. Cantwell, Phys. Rev. B 57, 12152 (1998). 10.1103/PhysRevB.57. 12151
9. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001). 10.1016/S0921-5107(00) 00604-8 (Pubitemid 32331341)
10. M. Kubon, E. Bochmer, F. Siebke, B. Rech, C. Beneking, and H. Wagner, Sol. Energy Mater. Sol. Cells 41, 485 (1996). 10.1016/0927-0248(95)00126-3 (Pubitemid 126357095)
11. S. Fay, J. Steinhauser, S. Nicolay, and C. Ballif, Thin Solid Films 518, 2961 (2010). 10.1016/j.tsf.2009.09.189
12. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, G. Cantwell, and W. Harsch, Phys. Rev. B 60, 2340 (1999). 10.1103/PhysRevB.60.2340
13. H. S. Uhm, Y. J. Hong, E. H. Choi, and D. Y. Kim, Appl. Phys. Lett. 98, 061501 (2011). 10.1063/1.3554433
14. H. D. Hagstrum, Phys. Rev. 119, 940 (1960). 10.1103/PhysRev.119.940
15. S. T. Tan, B. J. Chen, X. W. Sun, W. J. Fan, H. S. Kwok, X. H. Zhang, and S. J. Chua, J. Appl. Phys. 98, 013505 (2005). 10.1063/1.1940137 (Pubitemid 41049018)
16. X. L. Chen, X. H. Geng, J. M. Xue, D. K. Zhang, G. F. Hou, and Y. Zhao, J. Cryst. Growth 296, 43 (2006). 10.1016/j.jcrysgro.2006.08.028 (Pubitemid 44537277)
17. M. L. Addonizio and C. Diletto, Sol. Energy Mater. Sol. Cells 92, 1488 (2008). 10.1016/j.solmat.2008.06.013
18. H. S. Uhm, E. H. Choi, and G. S. Cho, Appl. Phys. Lett. 94, 031501 (2009). 10.1063/1.3073983
19. H. D. Hagstrum, Phys. Rev. 96, 336 (1954). 10.1103/PhysRev.96.336
20. J. A. Aranovich, D. G. Golmayo, A. L. Fahrenbruch, and R. H. Bube, J. Appl. Phys. 51, 4260 (1980). 10.1063/1.328243 (Pubitemid 11441300)
21. Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett. 83, 4719 (2003). 10.1063/1.1632537
22. L. M. Kukreja, S. Barik, and P. Misra, J. Cryst. Growth 268, 531 (2004). 10.1016/j.jcrysgro.2004.04.086