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Volumn 20, Issue 6, 2012, Pages 5849-5857

A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology

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[No Author keywords available]

Indexed keywords

TIMING JITTER;

EID: 84858981418     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.005849     Document Type: Article
Times cited : (72)

References (16)
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    • Rochas, A.1
  • 7
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    • C. Niclass, C. Favi, T. Kluter, M. Gersbach, and E. Charbon, "A 128x128 single-photon image sensor with column-level 10-bittime-to-digital converter array," IEEE J. Solid-State Circuits 43(12), 2977-2989 (2008).
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    • J. A. Richardson, L. A. Grant, R. K. Henderson, "Low dark count single-photon avalanche diode structure compatible with standard nanometer scale CMOS technology," IEEE Photon. Technol. Lett. 21(14), 1020-1022 (2009).
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    • Richardson, J.A.1    Grant, L.A.2    Henderson, R.K.3
  • 10
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    • A new single-photon avalanche diode in 90nm standard CMOStechnology
    • M.A. Karami, M. Gersbach, H. J. Yoon, and E. Charbon, "A new single-photon avalanche diode in 90nm standard CMOStechnology,"Opt. Express 18(21), 102-105 (2010).
    • (2010) Opt. Express , vol.18 , Issue.21 , pp. 102-105
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  • 12
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    • Molecular dynamics in living cells observed by fluorescence correlation spectroscopy with one- and two-photon excitation
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    • Reduction of fixed-position noise in position-sensitive single-photon avalanche diodes
    • M. W. Fishburn, Y. Maruyama., E. Charbon, "Reduction of fixed-position noise in position-sensitive single-photon avalanche diodes," IEEE Trans. Electron. Devices 58(8), 2354-2361 (2011).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.