Reduction of fixed-position noise in position-sensitive single-photon avalanche diodes

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2354-2361

  Fishburn, Matthew W ^a   Maruyama, Yuki ^a   Charbon, Edoardo ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Avalanche breakdown; semiconductor device noise; single photon avalanche diodes

Indexed keywords

ACTIVE AREA; AVALANCHE BREAKDOWN; DARK COUNT RATE; GUARD-RINGS; HIGH-VOLTAGES; LOW LIGHT; M-TECHNOLOGIES; PHOTON DETECTION; POSITION SENSITIVE; SEMICONDUCTOR DEVICE NOISE; SIGNAL TO NOISE; SINGLE PHOTON AVALANCHE DIODE;

CHARACTERIZATION; DIODES; MICROPROCESSOR CHIPS; PARTICLE BEAMS; PHOTONS; SIGNAL TO NOISE RATIO;

AVALANCHE DIODES;

EID: 79960837382     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2148117     Document Type: Article

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