17.4L: Late-news paper: Contact resistance and process integration effects on high-performance oxide TFTs with solution-deposited semiconductor and gate dielectric layers

Digest of Technical Papers - SID International Symposium

Volumn 41 1, Issue , 2010, Pages 241-244

  Heo, Jae Seok ^a   Kim, Junghan ^a   Choi, Seungchan ^a   Park, Kwon Shik ^a   Kim, Chang Dong ^a   Hwang, Yong Kee ^a   Chung, In Jae ^a   Meyers, Stephen T ^b   Anderson, Jeremy T ^b   Clark, Benjamin C ^b   Greer, Michael ^b   Jiang, Kai ^b   Grenville, Andrew ^b   Keszler, Douglas A ^b  

^a LG Display Co Ltd   (South Korea)

^b Inpria Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; OXIDE SEMICONDUCTORS;

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); BOTTOM CONTACTS; ELECTRICAL PERFORMANCE; GATE DIELECTRIC LAYERS; OXIDE TFTS; PROCESS INTEGRATION; TOP CONTACT; TOP-CONTACT DEVICES;

GATE DIELECTRICS;

EID: 84858980198     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3500417     Document Type: Conference Paper

References (8)

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2. J. T. Anderson, C. L. Munsee, C. M. Hung, T. M. Phung, G. S. Herman, D. C. Johnson, J. F. Wager, and D. A. Keszler "Solution-Processed HafSOx and ZircSOx Inorganic Thin-Film Dielectrics and Nanolaminates," Advanced Functional Materials, p. 2117-2124 (2007)
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5. rd ed., p.127-167 (2006)
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7. Yasuhiro Shimura, Kenji Nomura, Hisoshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono, "Specific contact resistance between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes," Thin Solid Films, Vol. 516, p.5899-5902 (2008)
8. 4 thin-film transistors," Appl. Phys. Lett., Vol. 92, p.133512 (2008)