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Volumn 2, Issue , 2010, Pages 202-205

Measurement of figure of merit for a single β-silicon carbide nanowire by the four-point three-ω method

Author keywords

SiC nanowire; 3 Method; Figure of merit; Seebeck coefficient; Thermal conductivity

Indexed keywords

ELECTRICAL CONDUCTIVITY; FIGURE OF MERIT; FOUR POINT PROBE; FOUR-POINT; NANOMANIPULATIONS; NOVEL TECHNIQUES; SEEBECK; SIC NANOWIRE; SILICON CARBIDE NANOWIRES; SINGLE NW; THERMOELECTRIC FIGURE OF MERIT;

EID: 78049425085     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.