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Volumn 2, Issue , 2010, Pages 202-205
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Measurement of figure of merit for a single β-silicon carbide nanowire by the four-point three-ω method
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Author keywords
SiC nanowire; 3 Method; Figure of merit; Seebeck coefficient; Thermal conductivity
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Indexed keywords
ELECTRICAL CONDUCTIVITY;
FIGURE OF MERIT;
FOUR POINT PROBE;
FOUR-POINT;
NANOMANIPULATIONS;
NOVEL TECHNIQUES;
SEEBECK;
SIC NANOWIRE;
SILICON CARBIDE NANOWIRES;
SINGLE NW;
THERMOELECTRIC FIGURE OF MERIT;
ELECTRIC CONDUCTIVITY;
ELECTRIC WIRE;
FLUIDICS;
NANOWIRES;
SEEBECK COEFFICIENT;
SILICON CARBIDE;
THERMAL CONDUCTIVITY;
THERMOANALYSIS;
NANOTECHNOLOGY;
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EID: 78049425085
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (4)
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