Seebeck coefficient of monocrystalline α-SiC and polycrystalline β-SiC measured at 300-533 K

Semiconductor Science and Technology

Volumn 15, Issue 1, 2000, Pages 32-33

  Abu Ageel, N ^a,c   Aslam, M ^a   Ager, R ^b   Rimai, L ^b  

^a Michigan State University   (United States)

^b FORD RESEARCH LABORATORY   (United States)

^c HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LASER ABLATION; POLYCRYSTALLINE MATERIALS; QUARTZ; SEEBECK EFFECT; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; THERMOCOUPLES;

SEEBECK ELECTROMOTIVE FORCE;

SEMICONDUCTING FILMS;

EID: 0033640118     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/1/305     Document Type: Article

References (8)

1. Pons P and Blasquez G 1994 Sensors Actuators A 41/42 398
2. Nagai T, Yamamoto K and Kobayashi I 1982 J. Phys. E: Sci. Instrum. 15 520
3. Wasa K, Tohda T, Kasahara Y and Hayakawa S 1979 Rev. Sci. Instrum. 50 1084
4. Pohl R G 1960 Proc. Conf. on Silicon Carbide (Boston, MA, 1959) ed J R O'Connor and J Smiltens (New York: Pergamon) p 312
5. Rimai L, Ager R, Hangas J, Logothetis E M, Abu-Ageel N and Aslam D 1993 J. Appl. Phys. 73 8242
6. Rimai L, Ager R, Weber W H, Hangas J, Samman A and Zhu W 1995 J. Appl. Phys. 77 6601
7. Abu-Ageel N, Aslam D, Ager R and Rimai L 1998 J. Vac. Sci. Technol. B 16 142
8. Kinzie P A 1973 Thermocouple Temperature Measurement (New York: Wiley-Interscience) p 20