Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 806-809

  Akiba, Masahiro ^a,b,c   Hirayama, Hideki ^a,c   Tomita, Yuji ^a,b,c   Tsukada, Yusuke ^a,b,c   Maeda, Noritoshi ^a,c   Kamata, Norihiko ^b,c  

^a RIKEN   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Al based electrode; DUV LED; Light extraction efficiency; NH 3 pulse flow method; P GaN

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN QUANTUM WELLS; CONTACT LAYERS; CW OPERATION; DEEP ULTRAVIOLET; DEEP-UV; DUV-LED; EXTERNAL QUANTUM EFFICIENCY; GROWTH CONDITIONS; GROWTH METHOD; HIGH REFLECTIVITY; LIGHT-EXTRACTION EFFICIENCY; MAXIMUM OUTPUT POWER; MG-DOPING; NH 3 PULSE-FLOW METHOD; P-GAN; P-TYPE; P-TYPE GAN; PULSE FLOW; ROOM TEMPERATURE;

ALUMINUM; EXTRACTION; GALLIUM NITRIDE; HOLE CONCENTRATION; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

LIGHT EMITTING DIODES;

EID: 84858804110     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100370     Document Type: Article

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