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Applied Physics A: Materials Science and Processing

Volumn 106, Issue 3, 2012, Pages 575-579

T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation

(11) Du, Y D a Cao, H Z b Yan, W a Han, W H a Liu, Y c Dong, X Z b Zhang, Y B a Jin, F b Zhao, Z S b Yang, F H a Duan, X M b

a INSTITUTE OF SEMICONDUCTORS (China)

b TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY (China)

c SUN YAT SEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; DIFFRACTION LIMITS; FEATURE SIZES; FEMTOSECOND LASER LITHOGRAPHY; GATE LENGTH; INCIDENT LASER; LASER FOCUS; MASK-LESS LITHOGRAPHY; MAXIMUM DRAIN CURRENT; PEAK EXTRINSIC TRANSCONDUCTANCE; SUBMICROMETER RESOLUTION; SUBSTRATE MATERIAL; T-SHAPED GATE;

ABLATION; FABRICATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTORESISTS; ULTRASHORT PULSES;

LITHOGRAPHY;

EID: 84858796343 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6712-6 Document Type: Article

Times cited : (4)

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