Making highly conductive ZnO: Creating donors and destroying acceptors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8263, Issue , 2012, Pages

  Look, D C ^a,b   Leedy, K D ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b WYLE LABORATORIES INC   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

acceptor concentration; annealing; degenerate electrons; donor concentration; Ga doped ZnO; mobility theory; pulsed laser deposition; Zn vacancies

Indexed keywords

ACCEPTOR CONCENTRATIONS; ANNEALING PROCESS; COMPENSATION RATIO; DEGENERATE ELECTRONS; DEGENERATE SEMICONDUCTORS; DONOR CONCENTRATIONS; EXPERIMENTAL VALUES; GA-DOPED ZNO; HIGH CONCENTRATION; INPUT PARAMETER; POSITRON ANNIHILATION MEASUREMENTS; ROOM-TEMPERATURE RESISTIVITY; SCATTERING THEORY; SELF-COMPENSATION; ZNO;

ANNEALING; CONDUCTIVE MATERIALS; GALLIUM; POINT DEFECTS; PULSED LASER DEPOSITION; ZINC OXIDE;

ZINC;

EID: 84858607928     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.910923     Document Type: Conference Paper

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