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Volumn 100, Issue 10, 2012, Pages

Electron drift-mobility measurements in polycrystalline CuIn 1-xGa xSe 2 solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CELL EFFICIENCY; ELECTRON DRIFT MOBILITY; P-TYPE; PHOTOCARRIER; POLYCRYSTALLINE; POLYCRYSTALLINE THIN FILM; TEMPERATURE DEPENDENT; TIME OF FLIGHT MEASUREMENTS;

EID: 84858406013     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3692165     Document Type: Article
Times cited : (26)

References (21)
  • 2
    • 18444391818 scopus 로고    scopus 로고
    • 10.1016/j.tsf.2004.11.018
    • M. Gloeckler and J. R. Sites, Thin Solid Films 480-481, 241 (2005). 10.1016/j.tsf.2004.11.018
    • (2005) Thin Solid Films , vol.480-481 , pp. 241
    • Gloeckler, M.1    Sites, J.R.2
  • 6
    • 84858410681 scopus 로고    scopus 로고
    • See supplementary material at E-APPLAB-100-002211 for references to electron Hall mobilities in n-type CIGS materials, measurements and analysis with voltage-dependent depletion widths, and the photocurrent and photocharge expressions.
    • See supplementary material at http://dx.doi.org/10.1063/1.3692165 E-APPLAB-100-002211 for references to electron Hall mobilities in n-type CIGS materials, measurements and analysis with voltage-dependent depletion widths, and the photocurrent and photocharge expressions.
  • 9
  • 16
    • 84858398111 scopus 로고    scopus 로고
    • Some electron mobilities were estimated using only the 1050 nm measurements; we found results with this procedure to be consistent with the more extensive one that we described above that used both 690 nm and 1050 nm measurements.
    • Some electron mobilities were estimated using only the 1050 nm measurements; we found results with this procedure to be consistent with the more extensive one that we described above that used both 690 nm and 1050 nm measurements.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.