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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 925-929

Corrosion in aluminum chemical mechanical planarization for sub-quarter-micron dynamic random access memory devices

(7) Kim, Jae Jeong a,c Kim, Jun Yong b Jeong, Chae Ho b Park, Nae Hak b Han, Sang Bum a Park, Jin Won a Lee, Won Jun b

a Seoul National University (South Korea)

b Hyundai MicroElectron Co Ltd (South Korea)

c Sejong University (South Korea)

Author keywords

Alumina; Aluminum; Chemical mechanical planarization; Corrosion; Damascene; Hydrogen peroxide

Indexed keywords

ALUMINA; HYDROGEN PEROXIDE; INTERFACES (MATERIALS); METALLIC FILMS; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL MECHANICAL PLANARIZATION (CMP);

ALUMINUM CORROSION;

EID: 0036478522 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.925 Document Type: Article

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.