SCOPUS 정보 검색 플랫폼

Volumn 92, Issue , 2012, Pages 62-66

Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)

(15) Ito, F a Shobha, H a Tagami, M a Nogami, T a Cohen, S b Ostrovski, Y b Molis, S c Maloney, K c Femiak, J c Protzman, J c Pinto, T c Ryan, E T c Madan, A c Hu, C K b Spooner, T a

a IBM (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

c IBM MICROELECTRONICS (United States)

Author keywords

Cu interconnect; Cu surface treatment; Electro migration; Low k; Plasma damage

Indexed keywords

BLANKET FILMS; CAP DIELECTRICS; CU FILMS; CU INTERCONNECT; CU SURFACES; DUAL DAMASCENE INTERCONNECTS; HIGH CARBON CONTENT; HIGH PRESSURE; K-VALUE; LOW-K; LOW-K FILMS; OXYGEN REMOVAL; PLASMA CONDITIONS; PLASMA DAMAGE; PLASMA IRRADIATIONS; POROUS LOW-K; RF-POWER; SURFACE DAMAGES; ULTRA LOW-K DIELECTRICS;

CHEMICAL MECHANICAL POLISHING; DIELECTRIC MATERIALS; OPTIMIZATION; OXYGEN; PLASMA DEPOSITION; PLASMAS; SURFACE CLEANING; SURFACE TREATMENT;

COPPER;

EID: 84858281399 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.01.077 Document Type: Conference Paper

Times cited : (11)

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