AlGaN/GaN Schottky-ohmic combined anode field effect diode with fluoride-based plasma treatment

Electronics Letters

Volumn 44, Issue 4, 2008, Pages 320-321

  Takatani, K ^a   Nozawa, T ^a   Oka, T ^a   Kawamura, H ^a   Sakuno, K ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; OHMIC CONTACTS; PLASMA DIAGNOSTICS; VOLTAGE CONTROL;

ALGAN BARRIER LAYERS; PLASMA TREATMENT;

SCHOTTKY BARRIER DIODES;

EID: 39349112007     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083428     Document Type: Article

References (5)

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2. Yoshida, S., Ikeda, N., Jiang, L., Wada, T., and Takehara, H.: ' A new GaN based field effect Schottky barrier diode with a very low on-voltage operation ', Proc. ISPSD'04., Kitakyushu, Japan, 2004, p. 323-326
3. Ikeda, N., Jiang, L., Kato, S., Masuda, M., and Yoshida, S.: ' A novel GaN device with thin AlGaN/GaN heterostructure for high-power applications ', Furukawa Rev., 2006, 29, p. 1-6 0429-9159
4. Cai, Y., Zhou, Y., and Lau, K.M.: ' Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode ', IEEE Trans. Electron Devices, 2006, 53, (9), p. 2207-2215 10.1109/TED.2006.881054 0018-9383
5. Elsass, C.R., Poblenz, C., Heying, B., Fini, P., Petroff, P.M., Denbaars, S.P., Mishra, U.K., Speck, J.S., Saxler, A., Elhamrib, S., and Mitchel, W.C.: ' Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy ', Jpn. J. Appl. Phys., 2001, 40, (Pt. 1, 11), p. 6235-6238 10.1143/JJAP.40.6235 0021-4922