Analysis of assembling ZnO nanoparticles into nanogap electrodes for nanoscale electronic device applications

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 6, 2011, Pages 4852-4862

  Seo, Young Kyo ^a   Kumar, Sanjeev ^b   Kim, Gil Ho ^a  

^a Sungkyunkwan University   (South Korea)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Dielectrophoreis; II VI Semiconductors; Nanoparticles; Nanoscale Materials Structure: Fabrication and Characterization

Indexed keywords

ABSORPTION EDGES; AC DIELECTROPHORESIS; ANNEALED SAMPLES; ANNEALING TEMPERATURES; APPLIED VOLTAGES; AS-GROWN; BAND TAILING; BLUE SHIFT; CHARACTERISTIC CURVE; CRYSTALLINITIES; CURRENT VOLTAGE; DEP FORCE; DIELECTROPHOREIS; FREQUENCY VARIATION; GATE VOLTAGES; II-VI SEMICONDUCTOR; NANO-SCALE MATERIALS; NANOGAP ELECTRODES; NANOSCALE DEVICE; NANOSCALE ELECTRONIC DEVICES; NEGATIVE DEP; OPTOELECTRONIC APPLICATIONS; PARTICLE-PARTICLE INTERACTIONS; PEAK-TO-PEAK VOLTAGES; POSITIVE DEP; SEMICONDUCTING BEHAVIOR; SHALLOW DEFECTS; SIZE QUANTIZATION; TRAPPING TIME; ZNO NANOPARTICLES;

ANNEALING; BROWNIAN MOVEMENT; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTROPHORESIS; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY; OPTIMIZATION; SOL-GEL PROCESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

NANOPARTICLES;

EID: 84858078114     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2011.4140     Document Type: Conference Paper

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