Multiphonon relaxation of moderately excited carriers in Si/SiO 2 nanocrystals

Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 8, 2012, Pages

  Moskalenko, A S ^a   Berakdar, J ^a   Poddubny, A N ^b   Prokofiev, A A ^b   Yassievich, I N ^b   Goupalov, S V ^b,c  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c JACKSON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84857706878     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.085432     Document Type: Article

References (72)

1. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature (London) NATUAS 0028-0836 10.1038/35044012 408, 440 (2000).
2. A. Polman, Nat. Mater. 1476-1122 10.1038/nmat705 1, 10 (2002).
3. I. Izeddin, A. S. Moskalenko, I. N. Yassievich, M. Fujii, and T. Gregorkiewicz, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.97.207401 97, 207401 (2006). (Pubitemid 44771846)
4. D. Timmerman, I. Izeddin, P. Stallinga, I. N. Yassievich, and T. Gregorkiewicz, Nat. Photonics 1749-4885 10.1038/nphoton.2007.279 2, 105 (2008).
5. W. D. A. M. de Boer, D. Timmerman, K. Dohnalova, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, Nat. Nanotechnology 1748-3387 10.1038/nnano.2010.236 5, 878 (2010).
6. Nanostructures: Theory and Modelling, edited by C. Delerue and M. Lannoo (Springer, Berlin, 2004).
7. Silicon Nanocrystals: Fundamentals, Synthesis and Applications, edited by L. Pavesi and R. Turan (Wiley-VCH, Weinheim, 2010).
8. A. A. Prokofiev, A. S. Moskalenko, I. N. Yassievich, W. D. A. M. de Boer, D. Timmerman, H. Zhang, W. J. Buma, and T. Gregorkiewicz, JETP Lett. JTPLA2 0021-3640 10.1134/S0021364009240059 90, 758 (2009)
9. A. A. Prokofiev, A. S. Moskalenko, I. N. Yassievich, W. D. A. M. de Boer, D. Timmerman, H. Zhang, W. J. Buma, and T. Gregorkiewicz, [Pis'ma ZhETF 90, 856 (2009)].
10. F. Trojánek, K. Neudert, M. Bittner, and P. Malý, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.72.075365 72, 075365 (2005). (Pubitemid 43406252)
11. J. Valenta, A. Fucikova, I. Pelant, K. Kusova, K. Dohnalova, A. Aleknavicius, O. Cibulka, A. Fojtik, and G. Kada, New J. Phys. NJOPFM 1367-2630 10.1088/1367-2630/10/7/073022 10, 073022 (2008).
12. A. N. Poddubny, A. A. Prokofiev, and I. N. Yassievich, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3525375 97, 231116 (2010).
13. I. Mihalcescu, J. C. Vial, A. Bsiesy, F. Muller, R. Romestain, E. Martin, C. Delerue, M. Lannoo, and G. Allan, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.51.17605 51, 17605 (1995).
14. C. Delerue, M. Lannoo, G. Allan, E. Martin, I. Mihalcescu, J. C. Vial, R. Romestain, F. Muller, and A. Bsiesy, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.75.2228 75, 2228 (1995).
15. A. N. Poddubny, A. S. Moskalenko, A. A. Prokofiev, S. V. Goupalov, and I. N. Yassievich, Phys. Status Solidi C 1610-1634 10.1002/pssc.201000407 8, 985 (2011).
16. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.55.645 55, 645 (1983).
17. T. Kunikiyo, M. Takenaka, Y. Kamakura, M. Yamaji, H. Mizuno, M. Morifuji, K. Taniguchi, and C. Hamaguchi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.355849 75, 297 (1994).
18. Y. Kamakura, I. Kawashima, K. Deguchi, and K. Taniguchi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1317239 88, 5802 (2000).
19. T. Inoshita and H. Sakaki, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.46.7260 46, 7260 (1992).
20. S. V. Goupalov, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.72.073301 72, 073301 (2005). (Pubitemid 41506537)
21. R. D. Schaller, J. M. Pietryga, S. V. Goupalov, M. A. Petruska, S. A. Ivanov, and V. I. Klimov, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett. 95.196401 95, 196401 (2005). (Pubitemid 41777216)
22. A. Pandey and P. Guyot-Sionnest, Science SCIEAS 0036-8075 10.1126/science.1159832 322, 929 (2008).
23. V. N. Stavrou and X. Hu, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.73.205313 73, 205313 (2006). (Pubitemid 43673646)
24. A. A. Prokofiev, S. V. Goupalov, A. S. Moskalenko, A. N. Poddubny, and I. N. Yassievich, Phys. E (Amsterdam) PELNFM 1386-9477 10.1016/j.physe.2008.08.053 41, 969 (2009).
25. B. Delley and E. F. Steigmeier, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.47.1397 47, 1397 (1993).
26. C. Garoufalis and A. Zdetsis, Phys. Chem. Chem. Phys. PPCPFQ 1463-9076 10.1039/b513184g 8, 808 (2006).
27. M. Luppi and S. Ossicini, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.71.035340 71, 035340 (2005). (Pubitemid 40396447)
28. E. Luppi, F. Iori, R. Magri, O. Pulci, S. Ossicini, E. Degoli, and V. Olevano, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.75.033303 75, 033303 (2007).
29. Y. M. Niquet, C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.62.5109 62, 5109 (2000).
30. L.-W. Wang and A. Zunger, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.466486 100, 2394 (1994).
31. S. Ogut, J. R. Chelikowsky, and S. G. Louie, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.79.1770 79, 1770 (1997).
32. A. S. Moskalenko, J. Berakdar, A. A. Prokofiev, and I. N. Yassievich, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.76.085427 76, 085427 (2007).
33. V. N. Abakumov, V. I. Perel, and I. N. Yassievich, Nonradiative Recombination in Semiconductors, Modern Problems in Condensed Matter Sciences Vol. 33, edited by, V. M. Agranovich, and, A. A. Maradudin, (Elsevier, Amsterdam, 1991).
34. P. Yu and M. Cardona, Fundamentals of Semiconductors-Physics and Materials Properties, 3rd ed. (Springer, Berlin, 2001).
35. W. Jantsch and Z. Wilamowski, in Spin Physics in Semiconductors, edited by, M. Dyakonov, (Springer, Berlin, 2008), pp. 179-210.
36. S. P. Dash, S. Sharma, R. S. Patel, M. P. de Jong, and R. Jansen, Nature (London) NATUAS 0028-0836 10.1038/nature08570 462, 491 (2009).
37. D. J. Lepine, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.6.436 6, 436 (1972).
38. J. L. Cheng, M. W. Wu, and J. Fabian, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.104.016601 104, 016601 (2010).
39. X. Hu and J. Zi, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/41/101 14, L671 (2002). (Pubitemid 35263809)
40. A. Valentin, J. Sée, S. Galdin-Retailleau, and P. Dollfus, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/20/14/145213 20, 145213 (2008). (Pubitemid 351570033)
41. L. Donetti, F. Gámiz, J. B. Roldán, and A. Godoy, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2208849 100, 013701 (2006). (Pubitemid 44090853)
42. K. Huang and A. Rhys, Proc. R. Soc. London, Ser. A 1364-5021 10.1098/rspa.1950.0184 204, 406 (1950).
43. K. Huang, Sci. Sin. 24, 27 (1981).
44. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Nauka, Moscow, 1972).
45. B. K. Ridley, Quantum Processes in Semiconductors (Clarendon, Oxford, 1999).
46. D. A. Varshalovich, A. N. Moskalev, and V. K. Khersonskii, Quantum Theory of Angular Momentum (World Scientific, Singapore, 1988).
47. A. Dargys and J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs, and InP (Science and Encyclopedia Publishers, Vilnius, 1994).
48. L. Brey, N. E. Christensen, and M. Cardona, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.36.2638 36, 2638 (1987).
49. A. Blacha, H. Presting, and M. Cardona, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.2221260102 126, 11 (1984).
50. A. S. Ioselevich and E. I. Rashba, Theory of Nonradiative Transitions, Quantum Tunneling in Condensed Media, Modern Problems in Condensed Matter Sciences, Vol. 34, edited by, Y. M. Kagan, and, A. J. Leggett, (Elsevier, Amsterdam, 1992).
51. In the case of GaAs, the corresponding matrix element is proportional to q because of the different type of the dominating electron interaction with optical phonons, which is of the Fröhlich type there. For GaAs NCs, the transition rates drop by several orders of magnitudes by the phonon energy deviation of just 20-30 μ eV. The corresponding energy range for Si NCs is larger than these extreme small values.
52. C. P. Lindsey and G. D. Patterson, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.440530 73, 3348 (1980).
53. M. Shlesinger, J. Stat. Phys. JSTPBS 0022-4715 10.1007/BF01012928 36, 639 (1984).
54. C. Delerue, G. Allan, C. Reynaud, O. Guillois, G. Ledoux, and F. Huisken, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.73.235318 73, 235318 (2006). (Pubitemid 43882703)
55. W. Zhang, C. Delerue, Y.-M. Niquet, G. Allan, and E. Wang, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.82.115319 82, 115319 (2010).
56. V. Burdov, Semiconductors SMICES 1063-7826 10.1134/1.1513861 36, 1154 (2002).
57. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
58. Z. A. Weinberg, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.331336 53, 5052 (1982). (Pubitemid 12566470)
59. A. Puzder, A. J. Williamson, J. C. Grossman, and G. Galli, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.097401 88, 097401 (2002).
60. H. W. Streitwolf, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.19700370165 37, K47 (1970).
61. M. Lax and J. L. Birman, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.2220490259 49, K153 (1972).
62. D. Long, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.120.2024 120, 2024 (1960).
63. D. K. Ferry, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.14.1605 14, 1605 (1976).
64. C. M. Krowne and J. W. Holm-Kennedy, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(74)90249-0 46, 197 (1974).
65. S. Sinha, P. K. Schelling, S. R. Phillpot, and K. E. Goodson, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1831549 97, 023702 (2005). (Pubitemid 40183036)
66. M. Asche and O. G. Sarbei, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.2221030102 103, 11 (1981).
67. L. I. Glazman and R. I. Shekhter, Sov. Phys.-JETP 67, 163 (1988)
68. L. I. Glazman and R. I. Shekhter, [Zh. Eksp. Teor. Fiz. 94, 292 (1988)].
69. We have included up to five emitted optical phonons in our numerical calculation.
70. A. N. Poddubny, S. V. Goupalov, V. I. Kozub, and I. N. Yassievich, JETP Lett. JTPLA2 0021-3640 10.1134/S002136400922010X 90, 683 (2009)
71. A. N. Poddubny, S. V. Goupalov, V. I. Kozub, and I. N. Yassievich, [Pis'ma ZhETF 90, 756 (2009)].
72. G. Allan and C. Delerue, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.79.195324 79, 195324 (2009).