Effect of back-gate biasing on floating electrolytes in silicon-on-insulator-based nanoribbon sensors

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 447-449

  Fernandes, P G ^a   Chapman, R A ^b   Seitz, O ^b   Stiegler, H J ^b   Wen, H C ^a   Chabal, Y J ^b   Vogel, E M ^c  

^a TEXAS INSTRUMENTS   (United States)

^b The University of Texas at Dallas   (United States)

^c Georgia Institute of Technology   (United States)

Author keywords

Biosensor; capacitive coupling; FET; pH; silicon on insulator (SOI)

Indexed keywords

BACK-GATE; BACK-GATE BIAS; BACK-GATE BIASING; CAPACITIVE COUPLING; CAPACITIVELY COUPLED; CONSTANT VOLTAGE; DYNAMIC MEASUREMENT; FET; NANORIBBONS; OPERATING VOLTAGE; REAL TIME MEASUREMENTS; SENSOR CHANNELS; SILICON-ON-INSULATOR (SOI); SILICON-ON-INSULATORS; STRONG COUPLING; SUBTHRESHOLD SWING;

BIOSENSORS; ELECTROLYTES; PH; SENSORS;

CAPACITIVE SENSORS;

EID: 84857448714     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2179115     Document Type: Article

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