Low thermal resistances at GaN-SiC interfaces for HEMT technology

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 378-380

  Cho, Jungwan ^a   Bozorg Grayeli, Elah ^a   Altman, David H ^a   Asheghi, Mehdi ^b   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); picosecond pump probe thermometry; thermal conductivity; thermal interface resistance (TIR)

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; COMPLEMENTARY DATA; COMPOSITE SUBSTRATE; EXPERIMENTAL UNCERTAINTY; INTERFACE RESISTANCE; MATERIAL COMBINATION; PICOSECONDS; ROOM TEMPERATURE; TEMPERATURE RISE; THERMAL INTERFACE RESISTANCE (TIR); THERMAL INTERFACES; TIME DOMAIN THERMOREFLECTANCE;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); SILICON CARBIDE; SUBSTRATES;

THERMAL CONDUCTIVITY;

EID: 84857446793     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2181481     Document Type: Article

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