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Applied Physics Letters

Volumn 84, Issue 8, 2004, Pages 1260-1262

Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot

(1) Mirin, Richard P a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTON ANTIBUNCHING; PHOTON EMISSION;

ENERGY GAP; EPITAXIAL GROWTH; HIGH TEMPERATURE APPLICATIONS; LIGHT EMISSION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

PHOTONS;

EID: 1642269047 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1650032 Document Type: Article

Times cited : (46)

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