Iterative cross-entropy encoding for memory systems with stuck-at errors

GLOBECOM - IEEE Global Telecommunications Conference

Volumn , Issue , 2011, Pages

  Hwang, Euiseok ^a   Narayanaswamy, Balakrishnan ^b   Negi, Rohit ^a   Kumar, B V K Vijaya ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b IBM RESEARCH INDIA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK ERROR RATES; CODING SCHEME; CROSS ENTROPY; CROSS-ENTROPY METHOD; ENCODING ALGORITHMS; ENCODING SCHEMES; EXPONENTIAL COMPLEXITY; LINEAR BLOCK CODE; MEMORY CELL; MEMORY CHANNELS; MEMORY SYSTEMS; POLYNOMIAL TIME COMPLEXITY; SIDE INFORMATION; STORAGE CAPACITY;

CHANNEL CODING; COMMUNICATION; CONCATENATED CODES; ENCODING (SYMBOLS); POLYNOMIAL APPROXIMATION;

RANDOM ERRORS;

EID: 84857211581     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GLOCOM.2011.6134073     Document Type: Conference Paper

References (22)

1. J. Brewer and M. Gill, Editors, Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive Guide to Understanding and Using Flash Memory Devices, Wiley-IEEE Press, 2008.
2. N. Mielke, T. Marquart, N. Wu, J. Kessenich, H. Belgal, E. Schares, F. Trivedi, E. Goodness, and L. R. Nevill, "Bit Error Rate in NAND Flash Memories," in Proc. IEEE Int. Reliability Phy. Symp. 2008, (IEEE IRPS'08), pp. 9-19, Phoenix, AZ, Apr. 2008.
3. A. Pirovano, A. Redaelli, F. Pellizzer, F. Ottogalli, M. Tosi, D. Ielmini, A. L. Lacaita, and R. Bez, "Reliability study of phase-change nonvolatile memories," IEEE Trans. Device Materials Reliability, vol. 4, no. 3, pp. 422-427, 2004.
4. K. Kim and S. J. Ahn, "Reliability investigations for manufacturable high density PRAM," in Proc. IEEE Int. Reliability Phy. Symp. 2005, (IEEE IRPS'05), pp. 157-162, San Jose, CA, Apr. 2005.
5. S. Lee, J. Jeong, T. S. Lee, W. M. Kim, and B. Cheong, "A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling," IEEE Electron Device Letters, vol. 30, no. 5, pp. 448-450, 2009.
6. C. Poivey, G. Gee, J. Barth, K. LaBel, and H. Safren, "Lessons Learned from Radiation Induced Effects on Solid State Recorders (SSR) and Memories," NASA/GSFC Radiation Effects and Analysis Home Page, http://radhome.gsfc.nasa.gov/radhome/papers/2002 SSR.pdf, 2002.
7. L. D. Edmonds et al., "Ion-Induced Stuck Bits in 1T/1C SDRAM Cells," IEEE Nucl. Sci., vol. 48, no. 6, pp. 1925-1930, 2001.
8. S. I. Gelfand and M. S. Pinsker, "Coding for channel with random parameters," Problems of Control Theory, vol. 9, no. 1, pp. 19-31, 1980.
9. C. Heegard and A. E. Gamal, "On the Capacity of Computer Memory with Defects," IEEE Trans. Inform. Theory, vol. IT-29, pp. 731-739, 1983.
10. A. V. Kuznetsov, T. Kasami, and S. Yamamura, "An error correcting scheme for defective memory," IEEE Trans. Inform. Theory, vol. IT-24, pp. 712-718, 1978. (Pubitemid 9404531)
11. C. Heegard, "Partitioned linear block codes for computer memory with stuck-at defects," IEEE Trans. Inform. Theory, vol. 29, no. 6, pp. 831-842, 1983. (Pubitemid 14486332)
12. E. Hwang, S. Jeon, R. Negi, B. V. K. Vijaya Kumar, and M. K. Cheng, "Scrubbing with partial side information for radiation-tolerant memory," in Proc. IEEE Global Commun. Conf. 2010 (IEEE GLOBECOM'10) Workshop, Miami, FL, Dec. 2010.
13. L. A. Lastras-Montaño, A. Jagmohan, and M. M. Franceschini, "Algorithms for memories with stuck cells," in Proc. IEEE Int. Symp. Inform. Theory 2010 (IEEE ISIT'10), pp. 968-972, Austin, TX, June 2010.
14. G. D. Cohen, "Applications of coding theory to communication combinatorial problems," Discrete Mathematics, vol. 83, no. 2-3, pp. 237-248, 1990.
15. P. T. de Boer, D. P. Kroese, S. Mannor, and R. Y. Rubinstein, "A Tutorial on the Cross-Entropy Method," Annals of Operations Research, vol. 134, no. 1, pp. 19-67, 2005.
16. T. M. Cover and J. A. Thomas, Elements of Information Theory, New York: Wiley, 1991.
17. R. Zamir, S. Shamai, and U. Erez, "Nested linear/lattice codes for structured multiterminal binning," IEEE Trans. Inform. Theory, vol. 48, no. 6, pp. 1250-1276, 2002. (Pubitemid 34759844)
18. G. Keshet, Y. Steinberg, and N. Merhav, "Channel coding in the presence of side information," Found. Trends Commun. Inf. Theory, vol. 4, no. 6, pp. 445-586, 2007.
19. S. Lin and D. J. Costello, Error control coding: fundamentals and applications, Englewood Cliffs, NJ: Prentice Hall, 1983.
20. S. Jeon, E. Hwang, B. V. K. Vijaya Kumar, and M. K. Cheng, "Investigation of memory protection using low-density parity-check (LDPC) codes," in IEEE Non-Volatile Memory Technology Symposium (IEEE NVMTS'09), Portland, OR, Oct. 2009.
21. S. Jeon, E. Hwang, B. V. K. Vijaya Kumar, and M. K. Cheng, "LDPC Codes for Memory Systems with Scrubbing," in Proc. IEEE Global Commun. Conf. 2010 (IEEE GLOBECOM'10), Miami, FL, Dec. 2010.
22. E. Hwang, S. Jeon, R. Negi, and B. V. K. Vijaya Kumar, "Coding with Side Information for Flash Memory Endurance," in Non-Volatile Memory Workshop (NVMW'11), San Diego, CA, Mar. 2011.