Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Han, Shu Jen ^a   Chang, Josephine ^a   Franklin, Aaron D ^a   Bol, Ageeth A ^a   Loesing, Rainer ^b   Guo, Dechao ^a,b   Tulevski, George S ^a   Haensch, Wilfried ^a   Chen, Zhihong ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FET; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHANNEL MATERIALS; CMOS PROCESSS; CRITICAL FACTORS; FERMI LEVEL PINNING; GATE DOPING; GATE WORK FUNCTION; HIGH DENSITY; POLY-SI; POLY-SI GATES; POST-SILICON; PROCESS COMPATIBILITY; PRODUCTION TOOLS; SUBTHRESHOLD SLOPE; WAFER SCALE FABRICATION; WAFER-SCALE INTEGRATION;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; LOGIC DEVICES; SILICON WAFERS;

CARBON NANOTUBES;

EID: 79951841993     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703326     Document Type: Conference Paper

References (6)

1. A. Javey et al., "Self-Aligned Ballistic Molecular Transistors and ElectParallel Nanotube Arrays," Nano Lett..,4 (7), pp.1319-1322, 2004
2. A. D. Franklin, G. Tulevski, J. B. Hannon, and Z. Chen, "Can Carbon Nanotube Transistors be Scaled Without Performance Degradation?," IEDM Tech. Dug., pp.561-564, 2009
3. J. A. Robinson et al., "Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties," ACS Nano, 4 (5), pp. 2667-2672, 2010
4. N. Patil et al., "Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes," IEEE Trans. Nanotechnology, vol. 8, pp. 498-504, 2009
5. S. Heinze, M. Radosavljević, J. Tersoff, and Ph. Avouris, "Unexpected scaling of the performance of carbon nanotube Schottky-barrier," Phys. Rev. B, 68:235418, 2003
6. Woong Kim, Ali Javey, Ophir Vermesh, Qian Wang, Yiming Li, and Hongjie Dai, " Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors," Nano Lett..,3 (2), pp.193-198, 2003