On the interface trap density and series resistance of tin oxide film prepared on n-type Si (1 1 1) substrate: Frequency dependent effects before and after 60Co γ-ray irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 259, Issue 2, 2007, Pages 889-894

  Karadeniz, S ^a   Selçuk, A Birkan ^a   Tugluoglu N ^a   Ocak, S Bilge ^a  

^a Saraykoy Nuclear Research and Training Center   (Turkey)

Author keywords

60Co ray; C V; G V; Interface state density; MOS diodes; Series resistance; SnO2

Indexed keywords

CAPACITANCE; DEPOSITION; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GAMMA RAYS;

INTERFACE STATE DENSITY; MOS DIODES; SERIES RESISTANCE; SPRAY DEPOSITION;

METALLIC FILMS;

EID: 34248654082     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.02.085     Document Type: Article

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