Novel electronic structure of inhomogeneous quantum wires on a Si surface

Physical Review Letters

Volumn 92, Issue 9, 2004, Pages

  Yoon, H S ^a   Park, S J ^a   Lee, J E ^a   Whang, C N ^a   Lyo, I W ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE TRANSFER; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SURFACE TOPOGRAPHY;

BRIGHT PROTRUSIONS (BP); LUTTINGER LIQUIDS; METAL-INSULATOR TRANSITIONS; PARABOLIC SHIFT;

SEMICONDUCTOR QUANTUM WIRES;

EID: 2442426035     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.096801     Document Type: Article

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