Tuning quantum corrections and magnetoresistance in ZnO nanowires by ion implantation

Nano Letters

Volumn 12, Issue 2, 2012, Pages 666-672

  Zeng, Y J ^a   Pereira, L M C ^a   Menghini, M ^a   Temst, K ^a   Vantomme, A ^a   Locquet, J P ^a   Van Haesendonck, C ^a  

^a KU LEUVEN   (Belgium)

Author keywords

ion implantation; magnetotransport; Nanowires; one dimensional; weak localization; ZnO

Indexed keywords

ANISOTROPIC MAGNETORESISTANCE; DEPHASING; ELECTRON TRANSPORT; ENHANCEMENT MODES; LOCAL MAGNETIC MOMENTS; LOW MAGNETIC FIELDS; MAGNETIC SCATTERING; MAGNETO TRANSPORT PROPERTIES; MAGNETOTRANSPORTS; NYQUIST; PHASE-COHERENCE LENGTH; QUANTUM CORRECTION; SEMIEMPIRICAL MODELS; SPIN-ORBIT SCATTERING; TEMPERATURE DEPENDENT; WEAK ELECTRON LOCALIZATIONS; WEAK LOCALIZATION; ZNO; ZNO NANOWIRES;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; NANOWIRES; ONE DIMENSIONAL; THREE DIMENSIONAL; ZINC OXIDE;

ION IMPLANTATION;

ALUMINUM; ION; NANOWIRE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRICITY; MAGNETISM; QUANTUM THEORY; SURFACE PROPERTY; TEMPERATURE;

ALUMINUM; ELECTRICITY; IONS; MAGNETICS; NANOWIRES; QUANTUM THEORY; SURFACE PROPERTIES; TEMPERATURE; ZINC OXIDE;

EID: 84856956950     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2034656     Document Type: Article

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