CMOS-based piezo-FET stress sensors in Wheatstone bridge configuration

Proceedings of IEEE Sensors

Volumn , Issue , 2011, Pages 93-96

  Gieschke, P ^a   Sbierski, B ^a   Paul, O ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; COMMON GATES; COMMONMODE; CRYSTALLOGRAPHIC AXES; DIFFERENTIAL VOLTAGE SIGNALS; FOUR-POINT BENDING; LOW-POWER CONSUMPTION; MECHANICAL STRESS; NMOS DEVICES; OFFSET VOLTAGE; OPTIMAL ORIENTATION; PIEZO-FET; PMOS DEVICES; SMALL SIZE; STANDARD DEVIATION; STRESS SENSITIVITY; STRESS SENSOR; STRONG INVERSION; WAFER PROBERS; WHEATSTONE BRIDGES;

BRIDGE CIRCUITS; CMOS INTEGRATED CIRCUITS; DESIGN; MESFET DEVICES; MOS DEVICES; OPTIMIZATION; STRESS MEASUREMENT; STRESSES;

SENSORS;

EID: 84856927537     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2011.6127299     Document Type: Conference Paper

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