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Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 2, 2012, Pages 403-407

Preparation and properties of Mg 0.2Zn 0.8O:Al UV transparent conducting thin films deposited by RF magnetron sputtering at room temperature with rapid annealing

(5) Wang, Hua a Huang, Zhu a Xu, Ji Wen a Yang, Ling a Zhou, Shang Ju a

a GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ARGON GAS PRESSURE; CRYSTALLINITIES; EFFECTIVE DOPING; ELECTRICAL RESISTIVITY; OPTICAL AND ELECTRICAL PROPERTIES; PREPARATION AND PROPERTIES; RAPID ANNEALING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SPECTRUM RANGE; SPUTTERING POWER; ULTRAVIOLET BANDS;

ALUMINUM; ANNEALING; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; OPACITY; SEMICONDUCTOR DOPING; THIN FILMS; ZINC;

ARGON;

EID: 84856749817 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0465-z Document Type: Article

Times cited : (4)

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