Laser ablated ZnO layers for ALGaN/GaN HEMT passivation

Vacuum

Volumn 86, Issue 6, 2012, Pages 672-674

  Vanko, G ^a   Vallo, M ^a   Bruncko, J ^b   Lalinsky T ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INTERNATIONAL LASER CENTER   (Slovakia)

Author keywords

AlGaN GaN heterostructures; C HEMT; Laser ablation; Passivation layer; ZnO

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ALGAN/GAN HETEROSTRUCTURES; C-HEMT; CHANNEL AREA; ELECTRON DRIFT MOBILITY; FULLY COMPATIBLE; GATE-LEAKAGE CURRENT; PASSIVATION LAYER; PROCESS TECHNOLOGIES; PULSED-LASER DEPOSITION TECHNIQUE; THIN LAYERS; ZNO; ZNO LAYERS;

CRYSTALS; DEPOSITION; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; LASER ABLATION; LEAKAGE CURRENTS; PASSIVATION; PULSED LASER DEPOSITION; PULSED LASERS; ZINC OXIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84856519159     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.07.028     Document Type: Conference Paper

References (7)

1. 4, and silicon oxynitride Appl Phys Lett 84 2004 613 615
2. J. Bernát, P. Javorka, A. Fox, M. Marso, H. Lüth, and P. Kordoš Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs Solid State Electronics 47 2003 2097 2103
3. W.K. Wang, C.H. Lin, P.C. Lin, C.K. Lin, F.H. Huang, and Y.J. Chan Low-k BCB passivation on AlGaN-GaN HEMT fabrication IEEE Electron Dev Lett 25 2004 763 765
4. B.P. Gila, G.T. Thaler, A.H. Onstine, M. Hlad, and A. Gerger Novel dielectrics for gate oxides and surface passivation on GaN Solid State Electronics 50 2006 1016 1023 (Pubitemid 44015805)
5. D.C. Oh, T. Suzuki, H. Makino, T. Hanada, H.J. Ko, and T. Yao Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers Phys Stat Sol (c) 3 4 2006 946 951
6. S. Singh, P. Thiyagarajan, K.M. Kant, D. Anita, S. Thirupathiah, and N. Rama Structure, microstructure and physical properties of ZnO based materials in various forms: bulk, thin film and nano J Phys D Appl Phys 40 2007 6312 6327 (Pubitemid 350093019)
7. G. Vanko, T. Lalinský, Ž Mozolová, J. Liday, P. Vogrinčič, and A. Vincze Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN Vacuum 82 2 2007 193 196 (Pubitemid 47562079)