Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect

Optics Express

Volumn 20, Issue 3, 2012, Pages 2319-2334

  Qiao, Peng Fei ^a   Mou, Shin ^b   Chuang, Shun Lien ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HAMILTONIANS; OPTICAL DATA PROCESSING; PHOTODETECTORS; SUPERLATTICES;

BAND-STRUCTURE MODEL; DESIGN AND SIMULATION; DOPING EFFECTS; ELECTRONIC BAND STRUCTURE; ENVELOPE FUNCTIONS; FERMI'S GOLDEN RULE; INJECTION CONDITIONS; INTERFACIAL EFFECTS; MATERIAL COMPOSITIONS; MIDINFRARED; MODELING RESULTS; MOMENTUM MATRIX ELEMENT; OPTICAL MEASUREMENT; OPTICAL TRANSITION RATES; QUANTUM STRUCTURE; TYPE-II SUPERLATTICES; VALENCE BAND MIXING;

OPTICAL PROPERTIES;

ARTICLE; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; INFRARED RADIATION; INSTRUMENTATION; LIGHT; PHOTOMETRY; RADIATION SCATTERING; THEORETICAL MODEL;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INFRARED RAYS; LIGHT; MODELS, THEORETICAL; PHOTOMETRY; SCATTERING, RADIATION;

EID: 84856475232     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.002319     Document Type: Article

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