Optimization of InAs/GaSb type-II superlattices for high performance of photodetectors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 20, Issue 3-4, 2004, Pages 527-530

  Haugan, H J ^a   Brown, G J ^a   Grazulis, L ^a   Mahalingam, K ^a   Tomich, D H ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B3. Infrared detectors; B3. Semiconductor devices

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICES; SUPERLATTICES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LIGHT-HOLE BANDS; STRAIN BALANCING PROCESS;

INFRARED DETECTORS;

EID: 0347128566     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.09.003     Document Type: Conference Paper

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