Mobility modeling in a p-MOSFET under uniaxial stress

Elektrotehniski Vestnik/Electrotechnical Review

Volumn 78, Issue 5, 2011, Pages 298-303

  Chaudhry, Amit ^a   Sangwan, Sonu ^a   Roy, Jatindra Nath ^a  

^a PANJAB UNIVERSITY   (India)

Author keywords

Experimental; Mobility; Model; Strained Si

Indexed keywords

BULK MOBILITY; CAP LAYERS; EXPERIMENTAL; FLAT-BAND VOLTAGE; INVERSION CHARGE DENSITY; MOBILITY MODELING; PMOSFET; SEMI-ANALYTICAL MODEL; SHARP INCREASE; STRAINED-SI; SURFACE ELECTRIC FIELDS; THREE COMPONENT; UNI-AXIAL STRAINS; UNIAXIAL STRESS; VERTICAL ELECTRIC FIELDS;

CARRIER MOBILITY; CHARGE DENSITY; ELECTRIC FIELDS; ELECTRON MOBILITY; ENERGY GAP; MATHEMATICAL MODELS; MODELS; MOSFET DEVICES; SILICON NITRIDE; SOLIDS; SURFACE ROUGHNESS;

HOLE MOBILITY;

EID: 84856444181     PISSN: 00135852     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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10. AmitChaudhry, SonuSangwan and J.N Roy, "Modeling of Some Electric Parameters of a MOSFET under Uniaxial Stress", Journal of Computational Electronics, (Springer) DOI:10.1007/s10825-011-0378-3 (Available online)