One-step electrodeposition of CuGaSe 2 thin films

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2781-2784

  Liu, Fangyang ^a   Yang, Jia ^a   Zhou, Jiaolian ^a   Lai, Yanqing ^b   Jia, Ming ^a   Li, Jie ^a   Liu, Yexiang ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Copper gallium selenide; Microstructure; One step electrodeposition; Optical properties; Photoelectrochemical measurements; Scanning electron microscopy; Solar cells; Thin films

Indexed keywords

AS-DEPOSITED FILMS; CHALCOPYRITE STRUCTURES; CRYSTALLINITIES; DEPOSITION POTENTIAL; GALLIUM SELENIDES; MO SUBSTRATES; MORPHOLOGY ANALYSIS; P-TYPE CONDUCTIVITY; PHOTOELECTROCHEMICAL MEASUREMENTS; RAMAN STUDIES; RAPID THERMAL ANNEALING PROCESS; SCANNING ELECTRONS; SECOND PHASE;

COPPER COMPOUNDS; DEPOSITION; ELECTRODEPOSITION; GALLIUM; GALLIUM ALLOYS; MICROSTRUCTURE; OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

COPPER;

EID: 84856407344     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.12.023     Document Type: Article

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