15.4% CuIn1-xGaxSe2-based photovoltaic cells from solution-based precursor films

Thin Solid Films

Volumn 361, Issue , 2000, Pages 396-399

  Bhattacharya, R N ^a   Hiltner, J F ^b   Batchelor, W ^a   Contreras, M A ^a   Noufi, R N ^a   Sites, J R ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CAPACITANCE; COPPER COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; ELECTROLESS PLATING; SEMICONDUCTING FILMS;

PHYSICAL VAPOR DEPOSITION (PVD);

PHOTOVOLTAIC CELLS;

EID: 0033903111     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00809-3     Document Type: Article

References (8)

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