Optical absorption and dispersion characterizations of CuGaSe2 thin films prepared by flash evaporation technique

Optics Communications

Volumn 284, Issue 10-11, 2011, Pages 2515-2522

  El Nahass, M M ^a   Farag, A A M ^a   Soliman, H S ^a  

^a Ain Shams University   (Egypt)

Author keywords

Capacitance; CuGaSe2; Optical; Photovoltaic

Indexed keywords

ABSORPTION COEFFICIENTS; ABSORPTION INDEXES; BUILT-IN VOLTAGE; CAPACITANCE VOLTAGE MEASUREMENTS; CRYSTAL FIELDS; CUGASE2; DIELECTRIC CONSTANTS; DIRECT TRANSITION; DISPERSION ENERGIES; EFFECTIVE MASS; FLASH EVAPORATION TECHNIQUE; FREE CHARGE CARRIERS; HIGH-FREQUENCY DIELECTRICS; JUNCTION DIODE; NORMAL INCIDENCE; OPTICAL; OPTICAL ABSORPTION; PHOTON ENERGY; PHOTOVOLTAIC; PHOTOVOLTAIC PROPERTY; SINGLE OSCILLATORS; SPECTROPHOTOMETRIC MEASUREMENTS; SPIN-ORBITALS; WAVELENGTH RANGES;

ABSORPTION; CAPACITANCE; CARRIER CONCENTRATION; DISPERSION (WAVES); EVAPORATION; FILM PREPARATION; HETEROJUNCTIONS; LIGHT REFRACTION; OPTICAL CONSTANTS; PHASE TRANSITIONS; PHOTOVOLTAIC EFFECTS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79952317554     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2011.01.018     Document Type: Article

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