Electrodeposition-based preparation of Cu (In,Ga) (Se,S)2 thin films

Electrochemical and Solid-State Letters

Volumn 12, Issue 9, 2009, Pages

  Lai, Yanqing ^a   Liu, Fangyang ^a   Kuang, Sanshuang ^a   Liu, Jun ^a   Zhang, Zhian ^a   Li, Jie ^a   Liu, Yexiang ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOPYRITE STRUCTURES; CU(IN , GA)SE; CU(IN ,GA)(S ,SE)2; CU(IN ,GA)(SE ,S)2; CU-POOR; GLANCING INCIDENT ANGLE; INHOMOGENEOUS STRUCTURE; LOW COSTS; TWO-STEP GROWTH;

AUGER ELECTRON SPECTROSCOPY; COPPER COMPOUNDS; DIFFRACTION; ELECTRODEPOSITION; FILM PREPARATION; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

COPPER;

EID: 67651229500     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3152338     Document Type: Article

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