Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2532-2536

  Tomakin, M ^a   Altunbas M ^b   Bacaksiz, E ^b   Celik S ^a  

^a RECEP TAYYIP ERDOGAN UNIVERSITY   (Turkey)

^b KARADENIZ TECHNICAL UNIVERSITY   (Turkey)

Author keywords

CdS; Electrical properties and measurements; Thin films; Vacuum evaporation; X ray diffraction

Indexed keywords

BOUNDARY POTENTIALS; CDS; CDS THIN FILMS; CONDUCTION MECHANISM; CURRENT TRANSPORT MECHANISM; ELECTRICAL PROPERTIES AND MEASUREMENTS; HIGH SUBSTRATE TEMPERATURE; HOPPING PROCESS; LOW SUBSTRATE TEMPERATURE; POLYCRYSTALLINE; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE; TEMPERATURE RANGE; THERMALLY-ASSISTED TUNNELING; VACUUM DEPOSITION METHOD; VACUUM EVAPORATION METHOD;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; DEPOSITION; ELECTRIC PROPERTIES; FILM PREPARATION; GRAIN BOUNDARIES; PHASE TRANSITIONS; SUBSTRATES; THERMIONIC EMISSION; THIN FILMS; VACUUM; VACUUM DEPOSITION; VAPOR DEPOSITION; X RAY DIFFRACTION;

VACUUM EVAPORATION;

EID: 84856377882     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.160     Document Type: Article

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