Preparation and characterization of new window material CdS thin films at low substrate temperature (<300 K) with vacuum deposition

Materials Science in Semiconductor Processing

Volumn 14, Issue 2, 2011, Pages 120-127

  Tomakin, M ^a   Altunbas M ^b   Bacaksz, E ^b   Polat, I ^b  

^a RECEP TAYYIP ERDOGAN UNIVERSITY   (Turkey)

^b KARADENIZ TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Annealing; CdS thin film; Grain size; Low substrate temperature

Indexed keywords

AFM; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; BAND EDGE; CDS FILMS; CDS THIN FILMS; CRYSTALLINITIES; GRAIN SIZE; HEXAGONAL STRUCTURES; HIGH SUBSTRATE TEMPERATURE; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURES; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BANDS; OPTICAL SPECTROSCOPY; POLYCRYSTALLINE; POST DEPOSITION ANNEALING; SEM STUDY; STRUCTURE ZONE MODEL; SUBSTRATE TEMPERATURE; WINDOW MATERIALS; X-RAY DIFFRACTION STUDIES;

ANNEALING; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CARRIER CONCENTRATION; DEPOSITION; ELECTRIC PROPERTIES; FILM PREPARATION; HYPERSONIC AERODYNAMICS; SUBSTRATES; THIN FILMS; VACUUM; VACUUM DEPOSITION; VAPOR DEPOSITION; X RAY DIFFRACTION;

OPTICAL FILMS;

EID: 79958098604     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.01.015     Document Type: Article

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