A scaled floating body cell (FBC) memory with high-k+metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 92-93

  Ban, Ibrahim ^a   Avci, Uygar E ^a   Kencke, David L ^a   Chang, Peter L D ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; METALS; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

BACK GATES; FLOATING BODIES; GA TE LENGTHS; METAL GATES; SOURCE-DRAIN; TECHNOLOGY NODES; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 52349112614     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588575     Document Type: Conference Paper

References (6)

1. F. Matsuoka et al., IEDM, 2007,
2. S. Okhonin et.al., IEDM, 2007,
3. C. W. Oh, et al., VLSI Tech., 2007,
4. R. Ranica et al., IEDM, 2004,
5. I. Ban et al, IEDM, 2006,
6. K. Mistry et al., IEDM, 2007.