Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys

Journal of Solid State Chemistry

Volumn 186, Issue , 2012, Pages 47-53

  Reshak, Ali Hussain ^a,b   Kamarudin, H ^b   Auluck, S ^c   Kityk, I V ^d  

^a UNIVERSITY OF SOUTH BOHEMIA   (Czech Republic)

^b UNIVERSITY MALAYSIA PERLIS   (Malaysia)

^c NATIONAL PHYSICAL LABORATORY   (India)

^d CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Bismuth containing semiconductors; DFT; FPLAPW; GaAs 1 xBi x alloys

Indexed keywords

DFT; FP-LAPW; GAAS; GENERALIZED GRADIENT APPROXIMATIONS; QUASI-RANDOM; SPIN-ORBIT COUPLINGS;

ALLOYS; BISMUTH; BISMUTH ALLOYS; CERIUM ALLOYS; ELASTIC MODULI; ELECTRONIC PROPERTIES; ENERGY GAP; SEMICONDUCTING GALLIUM;

GALLIUM ARSENIDE;

EID: 84856102583     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2011.11.018     Document Type: Article

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