Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se 2 thin-film solar cells

Thin Solid Films

Volumn 520, Issue 6, 2012, Pages 2115-2118

  Cho, Dae Hyung ^a   Chung, Yong Duck ^a,b   Lee, Kyu Seok ^a   Park, Nae Man ^a   Kim, Kyung Hyun ^a   Choi, Hae Won ^a,b   Kim, Jeha ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

Author keywords

Cd diffusion; CIGS solar cell; Growth temperature; ITO thin film; Series resistance

Indexed keywords

CD DIFFUSION; CDS; CIGS SOLAR CELLS; CU(IN , GA)SE; INDIUM TIN OXIDE; INTERFACE QUALITY; ITO FILMS; ITO THIN FILMS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SERIES RESISTANCES; SOLAR CELL PERFORMANCE; THIN-FILM SOLAR CELLS; TRANSPARENT CONDUCTING OXIDE;

ELECTRIC RESISTANCE; FILM GROWTH; GALLIUM; GROWTH TEMPERATURE; INDIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; TIN; TIN OXIDES;

INTERFACES (MATERIALS);

EID: 84855944266     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.08.083     Document Type: Article

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