Steady-state statistical sputtering model for extracting depth profiles from molecular dynamics simulations of dynamic SIMS

Journal of Physical Chemistry C

Volumn 116, Issue 1, 2012, Pages 1042-1051

  Paruch, Robert J ^a   Postawa, Zbigniew ^a   Wucher, Andreas ^b   Garrison, Barbara J ^c  

^a JAGIELLONIAN UNIVERSITY   (Poland)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CAPABILITY; DEPTH PROFILE; DIVIDE AND CONQUER; DYNAMIC SECONDARY ION MASS SPECTROMETRY; DYNAMIC SIMS; MD SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; NORMAL INCIDENCE; ROOT MEAN SQUARE ROUGHNESS; SAMPLE ROTATION; SPUTTERING MODELS; STEADY-STATE REGIONS;

DEPTH PROFILING; DYNAMICS; MOLECULAR DYNAMICS; SECONDARY ION MASS SPECTROMETRY;

COMPUTER SIMULATION;

EID: 84855893538     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2098075     Document Type: Article

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