Role of oxygen vacancies in visible emission and transport properties of indium oxide nanowires

Semiconductor Science and Technology

Volumn 27, Issue 1, 2012, Pages

  Gali, Pradeep ^a   Kuo, Fang Ling ^b   Shepherd, Nigel ^b   Philipose, U ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b Center for Advanced Research and Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; DEFECT-RELATED EMISSION; EFFECT OF OXYGEN; FIELD-EFFECT MOBILITIES; GROWTH DIRECTIONS; INDIUM OXIDE NANOWIRES; INTRINSIC DEFECTS; N-TYPE CONDUCTIVITY; PHOTOLUMINESCENCE MEASUREMENTS; POSTGROWTH ANNEALING; UV EMISSIONS; VAPOR PHASE TRANSPORT; VISIBLE EMISSIONS; VISIBLE REGION;

CARRIER CONCENTRATION; CARRIER MOBILITY; DEFECTS; ELECTRONIC PROPERTIES; INDIUM; NANOWIRES; OXYGEN; TRANSPORT PROPERTIES;

OXYGEN VACANCIES;

EID: 84855408652     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/1/015015     Document Type: Article

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