Room temperature CO gas sensing using Zn-doped In2O3 single nanowire field effect transistors

Sensors and Actuators, B: Chemical

Volumn 150, Issue 1, 2010, Pages 19-24

  Singh, Nandan ^a   Yan, Chaoyi ^a   Lee, Pooi See ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Doping; NW FET; Sensing; Sensor response; Zn doped In2O3

Indexed keywords

DOPING; NW-FET; SENSING; SENSOR RESPONSE; ZN-DOPED IN2O3;

DOPING (ADDITIVES); ELECTRIC WIRE; ELECTRON MOBILITY; GASES; MESFET DEVICES; NANOWIRES; SENSORS; SILICON NITRIDE; THRESHOLD VOLTAGE; ZINC;

FIELD EFFECT TRANSISTORS;

EID: 77957258860     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2010.07.051     Document Type: Article

References (26)

1. 2 gas-sensing properties Sens. Actuat. B: Chem. 130 2008 802 808
2. 3 nanowires Cryst. Growth Des. 7 2007 2500 2504
3. 3 nanowire devices Nano Lett. 4 2004 1919 1924
4. R.K. Joshi, Q. Hu, F. Alvi, N. Joshi, and A. Kumar Au decorated zinc oxide nanowires for CO sensing J. Phys. Chem. C 113 2009 16199 16202
5. C.Y. Liu, C.F. Chen, and J.P. Leu Fabrication and CO sensing properties of mesostructured ZnO gas sensors J. Elec. Chem. Soc. 156 1 2009 16 19
6. x:Pd mixed nanoparticle layers: insight into dual conductance response J. Appl. Phys. 105 2009 064312/1-064312/8
7. X.J. Huang, and Y.K. Choi Chemical sensors based on nanostructured materials Sens. Actuat. B: Chem. 122 2007 659 671
8. K. Soulantica, L. Erades, M. Sauvan, F. Senocq, A. Maisonnat, and B. Chaudret Synthesis of indium and indium oxide nanoparticles from indium cyclopentadienyl precursor and their application for gas sensing Adv. Funct. Mater. 13 2003 553 557
9. 2 nanowires prepared by polyol method Sens. Actuat. B: Chem. 136 2009 151 157
10. 2 nanowire gas sensor with high sensitivity Nanotechnology 19 2008 095508/1-095508/4
11. 3 multiple nanowire gas sensors Sens. Actuat. B: Chem. 129 2008 666 670
12. I.S. Hwang, Y.S. Kim, S.J. Kim, B.K. Ju, and J.H. Lee A facile fabrication of semiconductor nanowires gas sensor using PDMS patterning and solution deposition Sens. Actuat. B: Chem. 136 2009 224 229
13. O.K. Varghese, D. Gong, M. Paulose, K.G. Ong, E.C. Dickey, and C.A. Grimes Extreme changes in the electrical resistance of titania nanotubes with hydrogen exposure Adv. Mater. 15 2003 624 627
14. E. Comini, G. Faglia, G. Sberveglieri, Z. Pan, and Z.L. Wang Stable and highly sensitivegas sensors based on semiconducting oxide nanobelts Appl. Phys. Lett. 81 2002 1869 1871
15. 2 nanosheets Sens. Actuat. B: Chem. 131 2008 556 564
16. 4 nanocubes and nanorods Sens. Actuat. B: Chem. 123 2007 793 797
17. 3 sensing of indium oxide nanowires Appl. Phys. Lett. 83 2003 1845 1847
18. 3 nanowires as ammonia sensors J. Phys. Chem. B 107 2003 12451 12455
19. M.W. Ahn, K.S. Park, J.H. Heo, J.G. Park, D.W. Kim, K.J. Choi, J.H. Lee, and S.H. Hong Gas sensing properties of defect controlled ZnO-nanowire gas sensor Appl. Phys. Lett. 93 2008 263103/1-263103/3
20. 2-based gas sensors Sens. Actuat. B: Chem. 69 2000 144 152
21. L. Liao, Z. Zhang, B. Yan, Z. Zheng, Q.L. Bao, T. Wu, C.M. Li, Z.X. Shen, J.X. Zhang, H. Gong, J.C. Li, and T. Yu Multifunctional CuO nanowire devices: p-type field effect transistors and CO gas sensors Nanotechnology 20 2009 085203/1-085203/6
22. W.F. Zhang, Z.B. He, G.D. Yuan, J.S. Jie, L.B. Luo, X.J. Zhang, Z.H. Chen, C.S. Lee, W.J. Zhang, and S.T. Lee High performance, fully transparent and flexible zinc-doped indium oxide nanowire transistor Appl. Phys. Lett. 94 2009 123103/1-123103/3
23. 3 nanowires, nanotowers and ultra-long layered nanorods Nanotechnology 20 2009 195605/1-195605/7
24. W. Zhang, J. Jie, Z. He, S. Tao, X. Fan, Y. Zhou, G. Yuan, L. Luo, W. Zhang, C. Lee, and S. Lee Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode Appl. Phys. Lett. 92 2008 153312/1-153312/3
25. S.Y. Li, C.Y. Lee, P. Lin, and T.Y. Tseng Low temperature synthesized Sn doped indium oxide nanowires Nanotechnology 16 2005 451 457
26. M. Kumar, V.N. Singh, F. Singh, K.V. Lakshmi, B.R. Mehta, and J.P. Singh On the origin of photoluminescence in indium oxide octahedron structures App. Phys. Lett. 92 2008 171907/1-171907/3