Structural and electrical characterization of intrinsic n-type In2O3 nanowires

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Volumn 313-314, Issue , 2008, Pages 308-311

  Jo, Gunho ^a   Hong, Woong Ki ^a   Maeng, Jongsun ^a   Kim, Tae Wook ^a   Wang, Gunuk ^a   Yoon, Ahnsook ^a   Kwon, Soon Shin ^a   Song, Sunghoon ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Field effect transistor; Indium oxide; Nanoelectronics; Nanowire

Indexed keywords

FIELD EFFECT TRANSISTORS; INDIUM COMPOUNDS; NANOELECTRONICS; OXYGEN VACANCIES; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

DRAIN BIAS; ELECTRON CARRIER DENSITY; INDIUM OXIDE NANOWIRES; SATURATION REGIONS;

NANOWIRES;

GOLD; INDIUM; INDIUM OXIDE; NANOWIRE; OXIDE; UNCLASSIFIED DRUG;

ARTICLE; CATALYST; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; ELECTROCHEMICAL ANALYSIS; ELECTRON; FIELD EFFECT TRANSISTOR; MATERIALS TESTING; NANOCHEMISTRY; PRIORITY JOURNAL; STRUCTURE ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 37349078280     PISSN: 09277757     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.colsurfa.2007.04.166     Document Type: Article

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