Electrical, optical, and structural characterization of arsenic-tin oxidized transparent conducting films

Solar Energy

Volumn 86, Issue 1, 2012, Pages 126-131

  Dakhel, A A ^a  

^a UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

Arsenic doped SnO 2; Degenerate oxide semiconductors; Tin arsenic oxide

Indexed keywords

ARSENIC CONCENTRATION; ARSENIC CONTENT; ARSENIC DOPING; ARSENIC-DOPED SNO 2; DC ELECTRICAL CONDUCTIVITY; DEGENERATE OXIDE SEMICONDUCTORS; DEGENERATE SEMICONDUCTORS; DONOR DOPING; ELECTRICAL BEHAVIORS; INTERSTITIAL POSITIONS; IONS OCCUPIED; OPTICAL STUDY; PURE TIN; SILICON SUBSTRATES; STRUCTURAL CHARACTERIZATION; TRANSPARENT CONDUCTING FILMS; TRANSPARENT OXIDES; VACUUM THERMAL EVAPORATION;

CARRIER CONCENTRATION; CARRIER MOBILITY; CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY; FILM PREPARATION; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; THERMAL EVAPORATION; TIN; TINNING; VACUUM EVAPORATION;

ARSENIC;

ARSENIC; CONCENTRATION (COMPOSITION); ELECTRICAL CONDUCTIVITY; ELECTRICAL RESISTIVITY; EVAPORATION; FILM; MOBILITY; OXIDE; SEMICONDUCTOR INDUSTRY; SILICON; SUBSTRATE; TIN;

BRYOPHYTA;

EID: 84855198544     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2011.09.013     Document Type: Article

References (46)

1. Abbas A.K., Mohammad M.T. J. Appl. Phys. 1986, 59:1641.
2. Advani G.N., Jordan A.G. Sol. Energy 1983, 30:71.
3. Ahmed Sk.F., Khan S., Ghosh P.K., Mitra M.K., Chattopadhyay K.K. J. Sol-Gel. Sci. Technol. 2006, 39:241.
4. Arbiol J., Comini E., Faglia G., Sberveglieri G., Morante J.R. J. Cryst. Growth 2008, 310:253.
5. Aroutiounian V.M., Arakelyan V.M., Shahnazaryan G.E., Hovhannisyan H.R., Wang H., Turner J.A. Sol. Energy 2007, 81:1369.
6. Badawy W.A., Afify H.H., Elgiar E.M. J. Electrochem. Soc. 1990, 137:1592.
7. Batzill M., Diebold U. Prog. Surf. Sci. 2005, 79:47.
8. Bolzan A., Fong C., Kennedy B., Howard C. Acta Crystallogr. B 1997, 53:373.
9. Çetin K., Zunger A. Phys. Rev. Lett. 2002, 88:095501-1.
10. Chen L.M., Li H.Y., Sarachik K.B., Hwang W., Yang E.S. Sol. Energy 1985, 34:73.
11. Chung J., Choe Y., Kim D. Thin Solid Films 1999, 349:126.
12. Dieguez A., Romano-Rodriquz A., Morante J.R., Weimar U., Schweizer-Berberich M., Gopal N. Sens. Actuators 1996, B31:1.
13. Domashevskaya E.P., Ryabtsev S.V., Yurakov Yu.A., Chuvenkova O.A., Kashkarov V.M., Turishchev S.Yu., Kushev S.B., Lukin A.N. Thin Solid Films 2007, 515:6350.
14. Feng X., Ma J., Yang F., Ji F., Zong F., Luan C., Ma H. Mater. Lett. 2008, 62:1779.
15. Galatsis K., Cukrov L., Wlodarski W., McCormick P., Kalantar-zadeh K., Comini E., Sberveglieri G. Sens. Actuators, B 2003, 93:562.
16. Gnanam S., Rajendran V. J. Sol-Gel. Sci. Technol. 2010, 56:128.
17. Gopel G. Sens. Actuators, B: Chem. 1992, 6:239.
18. Gopel W., Schierbaum K.D. Sens. Actuators, B 1995, 26:1.
19. Guo W., Fu L., Zhang Y., Zhang K., Liang L.Y., Liu Z.M., Cao H.T., Pan X.Q. Appl. Phys. Lett. 2010, 96:042113.
20. He Y.S., Campbell J.C., Murphy R.C., Arendt M.F., Swinnea J.S. J. Mater. Res. 1993, 8:3131.
21. Hong W.Q. J. Phys. D Appl. Phys. 1989, 22:1384.
22. Izumi F. J. Solid State Chem. 1981, 38:381.
23. Jaklevic J.M., Goulding F.S. Energy dispersion. X-ray Spectrometry 1978, 50. M. Dekker, NY. H.K. Herglotz, L.S. Birks (Eds.).
24. Ji Z., He Z., Song Y., Liu K., Xiang Y. Thin Solid Films 2004, 460:324.
25. Handbook of X-rays for Diffraction, Emission, Absorption, and Microscopy 1967, 17-5. McGraw-Hill, New York. E.F. Kaelble (Ed.).
26. Khan A.F., Mehmood M., Rana A.M., Bhatti M.T. Appl. Surf. Sci. 2009, 255:8562.
27. Khan A.F., Mehmood M., Aslam M., Ashraf M. Appl. Surf. Sci. 2010, 256:2252.
28. Liu S.J., Chen L.Y., Liu C.Y., Fang W., Hsieh J.H., Juang J.Y. Appl. Surf. Sci. 2011, 257:2254.
29. Mohanty S., Ravi S. Solid State Commun. 2010, 150:739.
30. Mohanty S., Ravi S. Solid State Commun. 2010, 150:1570.
31. Morales J., Sanchez L. Solid State Ionics 1999, 126:219.
32. Morales J., Sánchez L. J. Electrochem. Soc. 1999, 146:1640.
33. Morales C., Juarez H., Diaz T., Matsumoto Y., Rosendo E., Garcia G., Rubin M., Mora F., Pacio M., Garcia A. Microelectron. J. 2008, 39:586.
34. Mwamburi M., Wackelgard E. Sol. Energy 2000, 68:371.
35. Nakada T., Hirabayashi Y., Tokado T., Ohmori D., Mise T. Sol. Energy 2004, 77:739.
36. Pankove, J.I., 1975. Optical Processes in Semiconductors. Dover, NY, p. 36.
37. Peltzer y Blancá E.L., Svane A., Christensen N.E., Rodriguez C.O., Cappannini O.M., Moreno M.S. Phys. Rev. B 1993, 48:15712.
38. Sanon G., Rup R., Mansingh A. Phys. Rev. B 1991, 44:5672.
39. Senthilkumar V., Vickraman P., Jayachandran M., Sanjeeviraja C. J. Mater. Sci: Mater. Electron. 2010, 21:343.
40. Shannon R.D. Acta Crystallogr. 1976, A32:751.
41. Singh K., Tamakloe R.Y. Sol. Energy 1996, 56:343.
42. Suito K., Kawai N., Masuda Y. Mater. Res. Bull. 1975, 10:677.
43. Sundaram K.B., Bhagavat G.K. J. Phys. D 1981, 14:921.
44. Tauc, J., 1969. In: Abeles, F. (Ed.), Optical Properties of Solids. North Holland.
45. Wan C.F., McGrath R.D., Keenan W.F., Frank S.N. J. Electrochem. Soc. 1989, 136:1459.
46. Wang S., Huang J., Zhao Y., Wang S., Wu S., Zhang S., Huang W. Mater. Lett. 2006, 60:1706.