Low temperature SnO2 films deposited by APCVD

Microelectronics Journal

Volumn 39, Issue 3-4, 2008, Pages 586-588

  Morales, C ^b   Juarez, H ^a   Diaz, T ^a   Matsumoto, Y ^b   Rosendo, E ^a   Garcia, G ^a   Rubin, M ^a   Mora, F ^a   Pacio, M ^b   Garcia A ^b  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

APCVD; Low temperature; SnCl4; SnO2

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FLUORINE; GLASS; LIGHT TRANSMISSION;

DEPOSITION TEMPERATURES; FLUORINE DOPANT SOURCE; OXIDIZING AGENTS; TIN TETRACHLORIDE;

THIN FILMS;

EID: 40649114275     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.101     Document Type: Article

References (16)

1. Mizuhashi M., Goto Y., and Adachi K. Jpn. J. Appl. Phys. 27 (1998) 2053
2. Gordon R.G. MRS Bull 25 (2000) 52
3. Tamura S., Ishida T., Magara H.M., Tabaka O., and Tatsuta T. Thin Solid Films 343-344 (1999) 142
4. Chopra K.L., Major S., and Pandya D.K. Thin Solid Films 102 (1983) 1
5. Studenikin S.A., Golego N., and Cocivera M. J. Appl. Phys. 84 (1998) 2287
6. Reddy Madhusudhana M.H., and Chandonkar A.N. Thin Solid Films 349 (1999) 260
7. Golan G., Axelevitch A., and Rabinovitch E. Microelectron. J. 29 (1998) 689
8. May C., and Strumpfel J. Thin Solid Films 351 (1999) 48
9. Aboaf J., Marcotte V., and Chou N. J. Electrochem. Soc. 120 (1973) 701
10. Ghoshtagore R. J. Electrochem. Soc. 125 (1978) 110
11. Ma H.L., Zhang D.H., Chen Y.P., Li S.Y., and Mzong J. Thin Solid Films 298 (1997) 151
12. Jarzebski Z.M., and Marton J.P. J. Electrochem. Soc 123 (1976) 333C
13. Davazoglou D. Thin Solid Films 302 (1997) 204-213
14. Saxena A.K., Thangaraj R., Singh S.P., and Agnihotri O.P. Thin Solid Films 131 (1985) 121-129
15. Kane J., Schweizer H.P., and Kern W. J. Electrochem. Soc. 123 (1976) 270
16. Tabata O., and Tanaka T. Surf. Sci. 86 (1979) 230