Investigations on current filamentation of IGBTs under unclamped inductive switching conditions

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 227-230

  Shoji, Tomoyuki ^a   Ishiko, Masayasu ^a   Fukami, Takeshi ^b   Ueta, Takashi ^b   Hamada, Kimimori ^b  

^a Rd Management Section   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HEATING; SWITCHING;

CURRENT FILAMENTS; DEVICE ACTIVE REGION; JOULE SELF-HEATING; UNCLAMPED INDUCTIVE SWITCHING (UIS);

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 27744597624     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Rose, P., Silber, D., Porst, A., Pfirsch, F., "Investigations on the Stability of Dynamic Avalanche in IGBTs," Proc. ISPSD'02, pp.165-168
2. Oetjen, J., Jungblut, R., Kuhlmann, U., Arkenau, J., Sittig, R., "Current filamentation in bipolar power devices during dynamic avalanche breakdown," Solid-State Electronics, 44, 2000, pp. 117-123
3. M.Yamaguchi, I. Omura., S. Urano, T. Ogura, "High-Speed 600V NPT-IGBT with Undamped Inductive Switching (UIS) Capability," Proc. ISPSD'03, pp.349-352
4. Marie Denison, Matej Blaho, Dieter Silber, Joachim Joos, Nils Jensen, Matthias Stecher, Viktor Dubec, Dionyz Pogany, Erich Gornik, "Hot Spot Dynamics in Quasi Vertical DMOS under ESD Stress," Proc. ISPSD'03, pp.80-83
5. DESSISISE Manual, ISE Integrated System Engineering AG, ISETCAD, Zurich, Switzerland.