Detection of localized UIS failure on IGBTs with the aid of lock-in thermography

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1432-1434

  Breglio, G ^a   Irace, A ^a   Napoli, E ^a   Riccio, M ^a   Spirito, P ^a   Hamada, K ^b   Nishijima, T ^b   Ueta, T ^b  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE FILTERS; BIPOLAR TRANSISTORS; QUALITY ASSURANCE; RELIABILITY; REMOTE SENSING; SAFETY FACTOR; THERMOGRAPHY (IMAGING); THERMOGRAPHY (TEMPERATURE MEASUREMENT);

CIRCUIT CONFIGURATIONS; CURRENT MONITORS; DEVICE FAILURES; FAILURE MECHANISMS; INTELLIGENT POWER; LATCH UPS; LOCALIZED FAILURE; LOCK-IN THERMOGRAPHY; SAMPLE PREPARATIONS; TIME CONSUMING;

FAILURE ANALYSIS;

EID: 50249114087     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.042     Document Type: Article

References (7)

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2. Kudoh M, Hoshi Y, Momota S, Fujihira T, Sakurai K. Current sensing IGBT for future intelligent power module. In: ISPSD'96 proceedings. p. 303-6.
3. Kudoh M, Otsuki M, Obinata S, Momota S, Yamazaki T, Fujihira T, et al. Current sensing IGBT structure with improved accuracy. In: ISPSD'95 proceedings. p. 119-22.
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